甘明龙, 李亚萌, 傅俊祥. NaYF4: Yb, Er@SiO2的高温相变及上转换[J]. 有色金属科学与工程, 2021, 12(1): 75-80. DOI: 10.13264/j.cnki.ysjskx.2021.01.010
引用本文: 甘明龙, 李亚萌, 傅俊祥. NaYF4: Yb, Er@SiO2的高温相变及上转换[J]. 有色金属科学与工程, 2021, 12(1): 75-80. DOI: 10.13264/j.cnki.ysjskx.2021.01.010
GAN Minglong, LI Yameng, FU Junxiang. Phase transition and upconversion luminescent properties of NaYF4: Yb, Er@SiO2 at high temperature[J]. Nonferrous Metals Science and Engineering, 2021, 12(1): 75-80. DOI: 10.13264/j.cnki.ysjskx.2021.01.010
Citation: GAN Minglong, LI Yameng, FU Junxiang. Phase transition and upconversion luminescent properties of NaYF4: Yb, Er@SiO2 at high temperature[J]. Nonferrous Metals Science and Engineering, 2021, 12(1): 75-80. DOI: 10.13264/j.cnki.ysjskx.2021.01.010

NaYF4: Yb, Er@SiO2的高温相变及上转换

Phase transition and upconversion luminescent properties of NaYF4: Yb, Er@SiO2 at high temperature

  • 摘要: 通过固-液热分解法合成平均尺寸为27 nm的六方相NaYF4: Yb, Er上转换纳米晶。制备了NaYF4: Yb, Er@SiO2核壳纳米粒子, 壳层厚度约为8 nm。将NaYF4: Yb, Er@SiO2分别在不同高温下焙烧3 h, 发现600 ℃下产物物相未发生变化, 但向非晶态过渡; 700、800 ℃下NaYF4内核与SiO2壳层发生化学反应, 产物物相均转变为NaYSiO4。样品均用980 nm红外激光进行激发, 显示出强烈的可见光上转换发射。以初始NaYF4: Yb, Er@SiO2的上转换发光强度为对比样, 随着焙烧温度的升高, 样品的发光强度依次提高。这与理论上低声子能量的氟化物发光强度更高不符, 可能原因是高温处理后样品去除了部分晶格缺陷和有机杂质。

     

    Abstract: Hexagonal phase NaYF4: Yb, Er upconversion nanocrystal with the size of around 27 nm were fabricated via solid-liquid thermal decomposition method. NaYF4: Yb, Er@SiO2 core-shell nanoparticles were prepared, with the thickness of shell layer about 8 nm. NaYF4: Yb, Er@SiO2 were annealed at different temperatures for 3 h respectively. The hexagonal phase NaYF4 transited to amorphous phase instead of other phase as the annealing temperature increased to 600 ℃. When it further increased to 700 ℃ or 800 ℃, the NaYF4 reacted with SiO2 shell and formed a new phase, NaYSiO4. The samples were excited by the 980 nm infrared laser and showed strong visible upconversion emission. The original NaYF4: Yb, Er@SiO2 were taken as comparison samples, the luminescence intensity of samples increased successively with the increase of annealed temperature. This is not consistent with the higher luminescence intensity of fluoride with low phonon energy. The possible reason is that some lattice defects and organic impurities were removed from the samples annealed at high temperature.

     

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