纳米多孔引入强化工业硅中杂质脱除研究

Research on impurity removal of industrial silicon powder through introduce of nano-porous structure

  • 摘要: 以工业硅粉为原料,分别采用化学刻蚀法,一步金属辅助刻蚀法和两步金属辅助刻蚀方法制备多孔工业硅粉,考查不同氧化剂物种及其浓度对多孔工业硅粉形貌结构及主要金属杂质 Fe、Al 的去除影响,结果表明:不同的氧化剂物种对粉末多孔硅的形貌结构和 Fe、Al 杂质的去除都有重要影响.相比而言,金属纳米颗粒辅助刻蚀方法在孔道生长速率、孔道形貌结构调控方面均表现更加出色, 通过选取合适的氧化剂种类和浓度,可以高效地获得孔径在 50~300 nm 之间,孔深在约 60 μm 范围内可调的多孔工业硅粉, 纳米孔道的引入对工业硅中主要金属杂质 Fe、Al 的去除均表现出较好的促进作用,特别是两步金属纳米颗粒辅助刻蚀技术对增强 Fe、Al 杂质的去除作用最为明显,在较优试验条件下,Fe、Al 杂质的去除效率分别可达 99.8 %和 94.7 %.

     

    Abstract: Based on industrial silicon powders, porous silicon powders were prepared with methods of chemical etching, one-step metal-assisted chemical etching(1-MACE), and two-step metal-assisted chemical etching (2-MACE). The effects of species and concentrations of oxidants on the morphologies and structures of porous industrial silicon as well as the removal rate of metal impurities Fe and Al were investigated. Metal nanoparticles assisted etching methods are better at controlling the growth rate and morphologies of the porous channel. With proper species and concentrations of oxidants, porous industrial silicon powders with controllable channel diameter in range of 50 -300 nm and depth within about 60 μm can be effectively obtained by MACE methods. Nano-channels can improve the removal efficiencies of Fe and Al impurities from industrial silicon, which particularly reached 99.8 % and 94.7 % under optimum experimental conditions with 2-MACE method.

     

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