Leaching Silicon Kinetics of Zinc Oxide Ore Leached with Alkali
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Graphical Abstract
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Abstract
The kinetics research of leaching silicon from the refractory hemimorphite leached with alkali was investigated.The effect of reaction temperature, concentration of sodium hydroxide on the leaching process was studied by obtaining the apparent activation energy and reaction progressions.The result showed that the apparent activation energy was determined to be about 72.58 kJomol-1, and the leaching rate was controlled by the surface chemical reaction.The reaction progression is 4.57.Enhancing the density of the sodium hydroxide, agitation rate and the temperature would accelerate the speed of silicon leaching and raise the leaching rate.
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