Effect of trace phosphorus and silicon on recrystallization behavior of rolled copper foil

The effects of different phosphorus (P) and silicon (Si) impurities on the recrystallization of pure copper foil were studied by means of mechanical and electrical properties test, metallographic observation and electron backscatter diffraction (EBSD). Rolled copper foil grains are elongated along the rolling direction, showing obvious processing of fibrous tissue, existed mainly in the forms of small angle grain boundaries and subgrain boundaries. The contents of P and Si have a significant influence on the recrystallization behavior of rolled pure copper foil. After annealed at 160 ℃ for 1h, the rolled copper foil with high content of P and Si showed some recrystallized structure. Rolled copper foil with lower P and Si impurity elements is completely recrystallized. The proportion of large-angle grain boundaries with orientation difference greater than 60° increases obviously, which is dominated by intact grains and large-angle grain boundaries.